Micron to build new HBM facility in Singapore to support AI growth

Apart from the new facility, Micron is also extending its collaboration with Pure Storage to offer more hyperscale data center solutions.

With demand for chips continue to be increasing globally, Micron Technology has broken grown on its new High-Bandwidth Memory (HBM) advanced packaging facility in Singapore. The new fab, which will be adjacent to Micron’s current facilities in Singapore is expected to see operations begin in 2026.

The HBM is expected to support Micron’s total advanced packaging capacity beginning in calendar 2027 to meet the demands of AI growth. The launch of this facility will further strengthen Singapore’s local semiconductor ecosystem and innovation. Singapore is already home to several semiconductor companies and the new fab will only propel the country’s position in the semiconductor industry.

With an investment of approximately US$7 billion being channeled through the end of the decade, the HBM facility will also create around 1,400 jobs in the country. According to Micron, these new roles will include functions such as packaging development, assembly and test operations.

Sanjay Mehrotra, president and CEO of Micron, commented that the increased AI adoption has proliferated across industries. This has led to the demand for advanced memory and storage solutions continuing to increase robustly.

“With the continued support of the Singapore government, our investment in this HBM advanced packaging facility strengthens our position to address the expanding AI opportunities ahead,” said Mehrotra.

Meanwhile, Png Cheong Boon, Chairman of the Singapore Economic Development Board, pointed out that the new facility will be Singapore’s first high-bandwidth memory advanced packaging facility, allowing the country to contribute to global AI growth.

“It expands Singapore’s partnership with Micron and further strengthens the semiconductor ecosystem in Singapore,” said Png.

Micron’s future expansion plans in Singapore will also support long-term manufacturing requirements for NAND. The semiconductor company will maintain flexibility in managing the pace of capacity ramps in both the HBM and NAND facilities to align with market demand.

According to Micron, its current facility in Singapore is the first front-end semiconductor fab in the world to be recognized as the Advanced Fourth Industrial Revolution Lighthouse and Sustainability Lighthouse by the World Economic Forum. The new HBM advanced packaging facility will be built in alignment with Micron’s sustainability commitments.

The facility will feature technologies such as a greenhouse gas abatement, water recycling and waste circularity (reduce, reuse, recycle, recover). The new building will be highly automated through AI-based intelligent solutions and designed to meet the Leadership in Energy and Environmental Design (LEED) certification requirements.

Micron collaborates with Pure Storage for hyperscale data center solutions

Apart from the groundbreaking event, Micron has also announced collaboration with Pure Storage to enable high-capacity and energy-efficient solutions that hyperscalers require using Micron G9 QLC NAND for future DirectFlash Module products.

Micron and Pure Storage have already been collaborating for a decade. This includes the integration of Micron’s latest NAND technology with Pure Storage solutions, which spans seven generations and includes the Micron G8 QLC NAND qualified for production in Pure Storage’s 150TB DirectFlash Module. The solution delivers a data storage platform with massive drive capacities, high performance, and low latency, while driving architectural simplification and delivering significant energy efficiency improvements.

As demand for data centers continues to increase, not only are data centers consuming more power, but they also need to make the most of the space available to them. Operators are continuously challenged to fit more storage into less space. Meanwhile, storage performance is even more important as a competitive advantage because consumers of data center services expect faster data processing as the rush to turn data into insights accelerates.

As such, the collaboration will see both companies deliver a winning total cost of ownership solution versus legacy hard drive-based storage solutions for hyperscalers. Benefits of the collaboration included improved performance and lower latency, with sustainability at the core of the deployment.

By integrating Micron’s NAND that offers industry-leading areal density, Pure Storage can also deliver highly scalable systems at a reduced total cost of acquisition and ownership.

“Pure Storage’s collaboration with Micron is another example of our significant momentum bringing the benefits of all-flash storage technology to hyperscale environments. With Micron’s advanced NAND technology, Pure Storage can further optimize storage scalability, performance, and energy efficiency for an industry with unparalleled requirements,” said Bill Cerreta, General Manager, Hyperscale, Pure Storage.

For Jeremy Werner, SVP & GM, Storage Business Unit at Micron, the semiconductor company’s advanced NAND technologies, combined with Pure’s innovative storage solutions, enable data center operators to address the increasing performance, efficiency, and scalability needs for today’s hyperscale data centers.